5SHY4045L0006是ABB公司推出的一種半導(dǎo)體功率模塊。
它是一種袖珍式智能化噪聲測量儀器，主要性能符合《JJG188—2002聲級計(jì)檢定規(guī)程》和IEC61672標(biāo)準(zhǔn)對2級聲級計(jì)要求。該聲級計(jì)采用64×128點(diǎn)陣大屏幕液晶顯示時(shí)鐘、可按設(shè)定時(shí)間自動測量、測量數(shù)據(jù)并可存儲并可通過RS-232C接口將數(shù)據(jù)傳輸?shù)狡渌O(shè)備。

半導(dǎo)體功率模塊是半導(dǎo)體功率器件（如晶體管、可控硅、GTO、GTR、MOSFET、IGBT等）和連接這些器件的外部電路（如散熱器、外殼、電源、驅(qū)動電路等）的組合體。
半導(dǎo)體功率模塊可根據(jù)封裝的元器件的不同實(shí)現(xiàn)不同功能，功率半導(dǎo)體模塊配用風(fēng)冷散熱可作風(fēng)冷模塊，配用水冷散熱可作水冷模塊等。

功率半導(dǎo)體工作原理是當(dāng)加正向偏置電壓時(shí)，即p-n結(jié)加上正向電壓時(shí)，即0.7伏特以下，半導(dǎo)體會導(dǎo)通，即電子可在p-n結(jié)中自由流動，就是平常說的導(dǎo)通狀態(tài)。當(dāng)加反向偏置電壓時(shí)，即p-n結(jié)加上反向電壓時(shí)，即在0.7伏特以上，半導(dǎo)體會截止，即電子不能在p-n結(jié)中自由流動，就是平常說的截止?fàn)顟B(tài)。它包括功率二極管、功率晶體管、功率MOSFET等器件的工作原理。
這些功率半導(dǎo)體器件的工作原理提供了實(shí)現(xiàn)電源控制、能量轉(zhuǎn)換和功率放大等應(yīng)用的基礎(chǔ)。通過合理的設(shè)計(jì)和控制，可以實(shí)現(xiàn)有效的功率管理和電能轉(zhuǎn)換。

5SHY4045L0006

5SHY4045L0006 is a semiconductor power module introduced by ABB.
It is a kind of pocket intelligent noise measuring instrument, the main performance conforms to the “JJG188-2002 sound level meter verification regulations” and IEC61672 standard for 2-level sound level meter requirements. The sound level meter adopts 64×128 dot matrix large screen LCD display clock, can automatically measure according to the set time, the measurement data can be stored and the data can be transmitted to other devices through the RS-232C interface.

A semiconductor power module is a combination of semiconductor power devices (such as transistors, thyristors, GTO, GTR, MOSFETs, IGBTs, etc.) and external circuits connected to these devices (such as heat sinks, enclosures, power supplies, drive circuits, etc.).
The semiconductor power module can achieve different functions according to the different components of the package, the power semiconductor module can be equipped with an air-cooled cooling module, and the water-cooled cooling module can be used as a water-cooled module.

The working principle of the power semiconductor is that when the forward bias voltage is added, that is, when the p-n junction is added to the forward voltage, that is, below 0.7 volts, the semiconductor will be switched on, that is, the electrons can flow freely in the p-n junction, which is commonly said to be the on-state. When the reverse bias voltage is added, that is, when the p-n junction is added to the reverse voltage, that is, above 0.7 volts, the semiconductor will be cut off, that is, the electrons cannot flow freely in the p-n junction, which is the usual cut-off state. It includes the working principle of power diode, power transistor, power MOSFET and other devices.
The working principles of these power semiconductor devices provide the basis for applications such as power control, energy conversion, and power amplification. Through reasonable design and control, effective power management and electric energy conversion can be achieved.

5SHY4045L0006