5SHX1060H0003可控硅高壓卡件VMIVME-7700具有板載BIOS設(shè)置程序，可控制許多配置選項(xiàng)。這些選項(xiàng)保存在一個(gè)特殊的非易失性文件中，電池支持的存儲(chǔ)芯片，統(tǒng)稱為電路板的CMOS配置”。
5SHX1060H0003 ABB 可控硅高壓卡件
F系列FENA-21是兩端口以太網(wǎng)適配器，支持多個(gè)通信協(xié)議:PROFINET IO、Ethernet/IP和Modbus TCP。協(xié)議的選擇在變頻器內(nèi)通過一個(gè)參數(shù)完成。
5SHX1060H0003 ABB 可控硅高壓卡件支持PROFINET IO DP-V1通信。通過FENA-01/-11模塊，PROFINET 網(wǎng)絡(luò)可利用PROFIdrive配置文件或ABB 變頻器配置文件。此外，還提供兩種透明模式一一分別針對(duì)16位和32位的字。
5SHX1060H0003 ABB 可控硅高壓卡件有關(guān)從應(yīng)用電源的那一刻起，硬件的行為。VMIVME-7700出廠時(shí)帶有硬盤驅(qū)動(dòng)器類型配置集CMOS中的自動(dòng)。VMIVME-7700 BIOS設(shè)置程序的詳細(xì)信息包含在附錄C中。VMIVME7700提供前面板訪問PMC擴(kuò)展站點(diǎn)VGA連接器，兩個(gè)10/100以太網(wǎng)連接器，手動(dòng)復(fù)位開關(guān)，COM 1和2，雙USB和狀態(tài)指示燈。VMIVME-7700前面板的圖紙如圖所示圖1-4中所示。前面板連接器和指示燈的標(biāo)簽如下：LAN 1 10/100 Mbit以太網(wǎng)連接器LAN 2 10/100 Mbit以太網(wǎng)連接器SVGA SVGA視頻接口RST手動(dòng)復(fù)位開關(guān)COM 1:2兩個(gè)Micro DB9串行連接器（COM 1和2）M/K雙鼠標(biāo)/鍵盤連接器USB兩個(gè)單獨(dú)的USB接口RPIB狀態(tài)指示燈

5SHX1060H0003

5SHX1060H0003 ABB 可控硅高壓卡件技術(shù)規(guī)格
IGCT是將GTO芯片與反并聯(lián)二極管和門極驅(qū)動(dòng)電路集成在一起，再與其門極驅(qū)動(dòng)器在外圍以低電感方式連接，結(jié)合了晶體管的穩(wěn)定關(guān)斷能力和晶閘管低通態(tài)損耗的優(yōu)點(diǎn)，
在導(dǎo)通階段發(fā)揮晶閘管的性能，關(guān)斷階段呈現(xiàn)晶體管的特性。IGCT 具有電流大、阻斷電壓高、開關(guān)頻率高、可靠性高、結(jié)構(gòu)緊湊、低導(dǎo)通損耗等特點(diǎn)，而且造成本低，成品率高，有很好的應(yīng)用前景。己用于電力系統(tǒng)電網(wǎng)裝置(100MVA)和的中功率工業(yè)驅(qū)動(dòng)裝置(5MWIGCT在中壓變頻器領(lǐng)域內(nèi)成功的應(yīng)用了11年的時(shí)間(到09年為止)，由于IGCT的高速開關(guān)能力無需緩沖電路，因而所需的功率元件數(shù)目更少運(yùn)行的可靠性大大增高。1GCT集 GBT(絕緣門極雙極性晶體管)的高速開關(guān)特性和GTO(門極關(guān)斷品聞管)的高陽斷電壓和低導(dǎo)通損耗特性于一體，一般觸發(fā)信號(hào)通過光纖傳輸?shù)絀GCT單元.在ACS6000的有緣整流單元的相模塊里，每相模塊由IGCT 和二極管、鉗位電容組成，由獨(dú)立的門

5SHX1060H0003

The 5SHX1060H0003 thyristor high voltage card VMIVME-7700 has an onboard BIOS setup program to control many configuration options. These options are saved in a special non-volatile file of the battery-supported memory chip, collectively known as the CMOS configuration of the circuit board.”
5SHX1060H0003 ABB thyristor high voltage clamp
The F-Series FENA-21 is a two-port Ethernet adapter that supports multiple communication protocols :PROFINET IO, Ethernet/IP, and Modbus TCP. The selection of the protocol is done by a parameter in the inverter.
5SHX1060H0003 ABB thyristor high voltage card supports PROFINET IO DP-V1 communication. With the FENA-01/-11 module, the PROFINET network can make use of the PROFIdrive profile or ABB inverter profile. In addition, two transparency modes are available for 16-bit and 32-bit words respectively.
5SHX1060H0003 ABB thyristor high voltage card is concerned with the behavior of the hardware from the moment the power supply is applied. The VMIVME-7700 comes out of the factory with hard drive type configuration set Automatic in CMOS. Details of the VMIVME-7700 BIOS setup program are included in Appendix C. The VMIVME7700 offers front panel access to the PMC expansion site with VGA connectors, two 10/100 Ethernet connectors, manual reset switches, COM 1 and 2, dual USB and status indicators. Figure 1-4 shows the front panel of the VMIVME-7700. Front panel connectors and indicators are labeled as follows: LAN 1 10/100 Mbit Ethernet connector LAN 2 10/100 Mbit Ethernet connector SVGA SVGA Video interface RST Manual reset switch COM 1:2 Two Micro DB9 serial connectors (COM 1 and 2) M/K dual mouse/keyboard connector USB Two separate USB port RPIB status indicators
5SHX1060H0003 ABB thyristor high voltage clamp technical specifications
IGCT integrates the GTO chip with the anti-parallel diode and gate driver circuit, and then connects it with the gate driver in a low inductance mode at the periphery, combining the stable turn-off ability of the transistor and the advantages of the low on-state loss of the thyristor.
The performance of thyristor is displayed in the on-stage, and the characteristics of transistor are displayed in the off-stage. IGCT has the characteristics of large current, high blocking voltage, high switching frequency, high reliability, compact structure, low on-off loss and so on, and has a good application prospect. It has been used in power system power grid devices (100MVA) and medium power industrial drive devices (5MWIGCT) in the field of medium voltage inverter has been successfully applied for 11 years (until 2009), because the high-speed switching capability of IGCT does not need buffer circuits, so the number of power components required is less and the reliability of operation is greatly increased. The 1GCT combines the high-speed switching characteristics of GBT(insulated gate bipolar transistor) with the high positive breaking voltage and low on-loss characteristics of GTO(gate shutdown detector), and the general trigger signal is transmitted to the IGCT unit through optical fibers. In the phase module of the ACS6000 marginal rectifier unit, each phase module consists of an IGCT, a diode, and a clamp capacitor, and is powered by an independent gate power supply unit GUSP

5SHX1060H0003