5SHY4045L0004 ABB 半導(dǎo)體可控硅是一種由硅制成的單向半導(dǎo)體器件，基本上晶閘管（SCR）是一種三端子四層半導(dǎo)體器件，由交替的P型和N型材料組成。

5SHY4045L0004 ABB 半導(dǎo)體可控硅具有三個pn結(jié)J 1、J 2和J 3，下圖顯示了具有 pnpn 層的 晶閘管。晶閘管具有端子 陽極(A)、陰極(K) 和 柵極G)，柵極端子 (G) 連接到靠近陰極 (K) 端子的 p 層。

5SHY4045L0004 ABB 半導(dǎo)體可控硅四層像兩個晶體管一樣工作，它們連接在一起（如下圖所示），一個的輸出形成另一個的輸入，門作為一種“啟動馬達(dá)”來激活它們。

5SHY4045L0004單個晶閘管（SCR）是一個 pnp 晶體管 (Q 1 ) 和一個npn 晶體管(Q 2 ) 的組合。這里，Q1的發(fā)射極作為 SCR 的陽極端子，而 Q2的發(fā)射極是它的陰極。另外，Q1的基極與Q2 的集電極連接，Q1 的集電極與Q 的基極連接，晶閘管的柵極端子也連接到Q2的基極。

5SHY4045L0004

5SHY4045L0004 ABB 半導(dǎo)體可控硅它是將GTO片與反并聯(lián)二極管和門極驅(qū)動電路集成在一起，再與其門極驅(qū)動器在外圍以低電感方式連接而成。也就是門極集成化的GTO (Gate Turn Off)。GCT在整流環(huán)節(jié)中與SCR-脈相承，SCR是Silicon Controled Rectifier的縮寫，是可控整流器的簡稱。可控硅有單向、雙向.可關(guān)斷和光控幾種類型。它具有體積小、重量輕、效率高、壽命長、控制方便等優(yōu)點，被廣泛用于可控整流、調(diào)壓、逆變以及無觸點開關(guān)等各種自動控制和大功率的電能轉(zhuǎn)換的場合。單向可控硅是一種可控整流電子元件，能在外部控制信號作用下由關(guān)斷變?yōu)閷?dǎo)通，但一旦導(dǎo)通，外部信號就無法使其關(guān)斷，只能靠去除負(fù)載或降低其兩端電壓使其關(guān)斷。單向可控硅是由三個PN結(jié)PNPN組成的四層三端半導(dǎo)體器件，與具有一個PN結(jié)的二極管相比，單向可控硅正向?qū)ㄊ芸刂茦O電流控制，與具有兩個PN結(jié)的三極管相比，差別在于可控磚對控制極電流沒有放大作用。雙向可控硅具有兩個方向輪流導(dǎo)通、關(guān)斷的特性。

5SHY4045L0004

5SHY4045L0004 ABB 半導(dǎo)體可控硅雙向可控磚實質(zhì)上是兩個反并聯(lián)的單向可控硅，是由NPNPN五層半導(dǎo)體形成四個PN結(jié)構(gòu)成、有三個電極的半導(dǎo)體器件。由于主電極的構(gòu)造是對稱的(都從N層引出)，所以它的電極不像單向可控硅那樣分別叫陽極和陰極，而是把與控制極相近的叫做第一電極A1，另一個叫做第二電極A2。雙向可控硅的主要缺點是承受電壓上升率的能力較低。這是因為雙向可控娃在一個萬向?qū)ńY(jié)束時，硅片在各層中的載流子還沒有回到截止?fàn)顟B(tài)的位置，必須采取相應(yīng)的保護(hù)措施。
5SHY4045L0004 ABB 半導(dǎo)體可控硅雙向可控硅元件主要用于交流控制電路，如溫度控制、燈光控制、防爆交流開關(guān)以及直流電機調(diào)速和換向等電路。可控硅在維持電流以上一直處于開通狀態(tài)，關(guān)斷電流高，控制困難，關(guān)斷速度較慢。逆變環(huán)節(jié)中，在LCI(負(fù)載換相逆變器)中SCR具有優(yōu)異表現(xiàn)，可做到超大功率，電壓高、電流也大。二極管 (Diode，不可控整流器件)和SCR (半可控)整流均不需要PMW即可滿足兩象限變頻器工作，PWM需要用IGBT (全控)等器件。

5SHY4045L0004

5SHY4045L0004 ABB semiconductor thyristor is a unidirectional semiconductor device made of silicon, basically a thyristor (SCR) is a three-terminal four-layer semiconductor device, consisting of alternating P-type and N-type materials.

The 5SHY4045L0004 ABB semiconductor thyristor has three pn junctions J1, J2 and J3. The figure below shows a thyristor with a pnpn layer. The thyristor has A terminal anode (A), a cathode (K), and a gate G), and the gate terminal (G) is connected to a p layer near the cathode (K) terminal.

The 5SHY4045L0004 ABB semiconductor thyristor four layers work like two transistors, they are connected together (as shown below), the output of one forms the input of the other, and the gate acts as a kind of “starter motor” to activate them.

The 5SHY4045L0004 single thyristor (SCR) is a combination of a pnp transistor (Q1) and an npn transistor (Q2). Here, Q1’s emitter acts as the anode terminal of the SCR, while Q2’s emitter acts as its cathode. In addition, the base of Q1 is connected to the collector of Q2, the collector of Q1 is connected to the base of Q, and the gate terminal of the thyristor is also connected to the base of Q2.

5SHY4045L0004

5SHY4045L0004 ABB semiconductor thyristor It is a GTO chip integrated with an anti-parallel diode and a gate driver circuit, and then connected with its gate driver in a low inductance mode at the periphery. This is the GTO (Gate Turn Off). GCT is connected with SCR- pulse in the rectification link, SCR is the abbreviation of Silicon Controled Rectifier, is the abbreviation of controlled rectifier. Thyristor has unidirectional and bidirectional. Can be turned off and light control several types. It has the advantages of small size, light weight, high efficiency, long life, easy control, etc., and is widely used in various automatic control and high-power electric energy conversion occasions such as controlled rectification, voltage regulation, inverter and contactless switch. Unidirectional thyristor is a controlled rectifier electronic component that can be turned off by an external control signal, but once it is turned on, the external signal cannot be turned off, and it can only be turned off by removing the load or reducing the voltage at both ends. Unidirectional thyristor is a four-layer three-terminal semiconductor device composed of three PN junction PNPN, compared with a diode with one PN junction, unidirectional thyristor is controlled by the control electrode current, compared with a triode with two PN junction, the difference is that the controlled brick has no amplification effect on the control electrode current. Bidirectional thyristor has the characteristics of turning on and off in two directions.
5SHY4045L0004 ABB semiconductor thyristor bidirectional controllable brick is essentially two anti-parallel unidirectional thyristor, which is a semiconductor device composed of four PN structures formed by NPNPN five layers of semiconductors and three electrodes. Because the structure of the main electrode is symmetrical (all from the N layer), its electrodes are not called anode and cathode like unidirectional thyristors, but the first electrode A1 that is very close to the control is called the second electrode A2. The main disadvantage of bidirectional thyristors is the low ability to withstand the voltage rise rate. This is because the bidirectional controllable child at the end of a million pilot, the silicon wafer in each layer of the carrier has not returned to the cutoff state position, must take appropriate protective measures.
5SHY4045L0004 ABB semiconductor thyristor bidirectional thyristor components are mainly used in AC control circuits, such as temperature control, light control, explosion-proof AC switches, and DC motor speed regulation and commutation circuits. The thyristor is always in the open state above the maintenance current, the turn-off current is high, the control is difficult, and the turn-off speed is slow. In the inverter link, SCR has excellent performance in LCI(load commutated inverter), which can achieve large power, high voltage and large current. Diode (uncontrolled rectifier device) and SCR (semi-controllable) rectifier do not require PMW to meet the two-quadrant inverter work, PWM requires IGBT (full control) and other devices.