5SHX08F4502是集成門(mén)極換向晶閘管（IGCT）。
Hitachi Energy的IGCT都是壓裝設(shè)備，以相對(duì)較大的力壓在散熱器上，散熱器也用作電源端子的電觸點(diǎn)，其控制功耗通常在10^-
6W。
集成門(mén)極換向晶閘管（IGCT）是20世紀(jì)90年代后期出現(xiàn)的新型電力電子器件，有的廠(chǎng)家也稱(chēng)為GCT（Gate-Commutated
Thyristor）或門(mén)極換流晶閘管，是用于巨型電力電子成套裝置中的新型電力半導(dǎo)體器件。
IGCT是基于GTO（門(mén)極可關(guān)斷晶閘管）結(jié)構(gòu)，利用集成柵極結(jié)構(gòu)進(jìn)行柵極硬驅(qū)動(dòng)，采用緩沖層結(jié)構(gòu)及陽(yáng)極透明發(fā)射極技術(shù)的新型大功率半導(dǎo)體開(kāi)關(guān)器件。它具有晶閘管的通態(tài)特性及晶體管的開(kāi)關(guān)特性，由于采用了緩沖結(jié)構(gòu)以及淺層發(fā)射極技術(shù)，因而使動(dòng)態(tài)損耗降低了約50%。此類(lèi)器件還在一個(gè)芯片上集成了具有良好動(dòng)態(tài)特性的續(xù)流二極管，從而以其獨(dú)特的方式實(shí)現(xiàn)了晶閘管的低通態(tài)壓降、高阻斷電壓和晶體管穩(wěn)定的開(kāi)關(guān)特性有機(jī)結(jié)合。IGCT使變流裝置在功率、可靠性、開(kāi)關(guān)速度、效率、成本、重量和體積等方面都取得了巨大進(jìn)展，給電力電子成套裝置帶來(lái)了新的飛躍。

5SHX08F4502

The 5SHX08F4502 is an integrated gate commutated thyristor (IGCT).
Hitachi Energy’s IGCTs are press-mounted devices that are pressed to a radiator with a relatively large force, and the radiator is also used as an electrical contact for the power terminal, with a control power consumption typically of 10^-
6W.
Integrated Gate commutator thyristor (IGCT) is a new type of power electronic device that appeared in the late 1990s, also known as GCT (Gate-commutated) in some manufacturers
Thyristor, or gate commutated thyristor, is a new type of power semiconductor device used in large power electronics packages.
IGCT is a new type of high-power semiconductor switching device based on GTO (gate turn-off thyristor) structure, which uses integrated gate structure for hard gate drive, buffer layer structure and transparent anode emitter technology. It has the on-state characteristics of thyristor and the switching characteristics of transistor. Because of the buffer structure and shallow emitter technology, the dynamic loss is reduced by about 50%. This kind of device also integrates a continuous current diode with good dynamic characteristics on a chip, thus realizing the combination of low on-state voltage drop, high blocking voltage and stable switching characteristics of the transistor in its unique way. IGCT has made great progress in power, reliability, switching speed, efficiency, cost, weight and volume, and has brought a new leap to power electronic complete sets.

5SHX08F4502