5SHY4045L0003是IGCT，是用于巨型電力電子成套裝置中的新型電力半導(dǎo)體器件。
IGCT是一種基于GTO結(jié)構(gòu)、利用集成柵極結(jié)構(gòu)進(jìn)行柵極硬驅(qū)動(dòng)、采用緩沖層結(jié)構(gòu)及陽極透明發(fā)射極技術(shù)的新型大功率半導(dǎo)體開關(guān)器件，具有晶閘管的通態(tài)特性及晶體管的開關(guān)特性。由于采用了緩沖結(jié)構(gòu)以及淺層發(fā)射極技術(shù)，因而使動(dòng)態(tài)損耗降低了約50%，另外，此類器件還在一個(gè)芯片上集成了具有良好動(dòng)態(tài)特性的續(xù)流二極管，從而以其獨(dú)特的方式實(shí)現(xiàn)了晶閘管的低通態(tài)壓降、高阻斷電壓和晶體管穩(wěn)定的開關(guān)特性有機(jī)結(jié)合。IGCT使變流裝置在功率、可靠性、開關(guān)速度、效率、成本、重量和體積等方面都取得了巨大進(jìn)展，給電力電子成套裝置帶來了新的飛躍。

電力半導(dǎo)體器件是用于電能變換和電能控制電路中的大功率電子器件。
電力半導(dǎo)體器件可以分為半控型器件、全控型器件和不可控型器件。其中，晶閘管為半控型器件，承受電壓和電流容量在所有器件中最高；電力二極管為不可控器件，結(jié)構(gòu)和原理簡單，工作可靠；還可以分為電壓驅(qū)動(dòng)型器件和電流驅(qū)動(dòng)型器件，其中GTO、GTR為電流驅(qū)動(dòng)型器件，IGBT、電力MOSFET為電壓驅(qū)動(dòng)型器件。

5SHY4045L0003 is an IGCT, a new power semiconductor device for use in giant power electronics packages.
IGCT is a new type of high-power semiconductor switching device based on GTO structure, using integrated gate structure to drive the gate hard, using buffer layer structure and transparent anode emitter technology, which has the on-state characteristics of thyristor and the switching characteristics of transistor. Due to the use of buffer structure and shallow emitter technology, the dynamic loss is reduced by about 50%, in addition, such devices are also integrated on a chip with good dynamic characteristics of the continuous current diode, so that in its unique way to achieve the low on-state voltage drop, high blocking voltage and transistor stable switching characteristics of the organic combination. IGCT has made great progress in power, reliability, switching speed, efficiency, cost, weight and volume, and has brought a new leap to power electronic complete sets.

Power semiconductor devices are high-power electronic devices used in power conversion and power control circuits.
Power semiconductor devices can be divided into semi-controlled devices, fully controlled devices and uncontrollable devices. The thyristor is a semi-controlled device with the highest voltage and current capacity among all devices. The power diode is an uncontrollable device with simple structure and principle and reliable operation. It can also be divided into voltage driven devices and current driven devices, of which GTO and GTR are current driven devices, and IGBT and power MOSFET are voltage driven devices.

5SHY4045L0003